• VDS (V) = -40V
• ID = -6.2A(VGS = -10V)
• RDS(ON) <41mΩ(VGS=-10V)
• RDS(ON) <70mΩ(VGS=-4.5V)
• Trench Technology
• Ultra Low On-Resistance
• P-Channel MOSFET
• Lead-Free