■ 300 W peak pulse power (tp = 8/20μs)
■ Bidirectional and unidirectionalconfigurations
■ Solid-state silicon-avalanche technology
■ Low clamping voltage
■ Low leakage current
■ Low capacitance (Cj=60 pF typ.)
■ Protection two data lines
■ IEC 61000-4-2 ±30kV contact ±30kV air
■ IEC 61000-4-4 (EFT) 40A(5/50ns)
■ IEC 61000-4-5 (Lightning) 12A(8/20μs)
