The UCLAMP3301D is constructed using proprietary EPD process technology. The EPD process provides low standoff voltages with significant reduc-tions in leakage currents and capacitance over silicon-avalanche diode processes. They feature a true operating voltage of 3.3 volts for superior protection when compared to traditional pn junction devices. The UCLAMP3301D is in a SOD-323 package and will protect one unidirectional line. They give the designer the flexibility to protect one line in applications where arrays are not practical.
