STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as power management and other battery powered circuits where high-side switching.
VDS (V) =-30V
ID =-12 A (VGS =-20V)
RDS(ON) ＜ 13mΩ (VGS =-20V)
RDS(ON) ＜ 14mΩ (VGS =-10V)
RDS(ON) ＜ 30mΩ (VGS =-5V)
The AO4409 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
