Primary Side Switch
Surface mounted on 1" x 1" FR4 board.
See SOA curve for voltage derating.
The MOSFET uses advanced trench technology and designto provide excellent Ros(ow) with low gate charge. lt can be used in awide variety of applications.
These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.
Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDSON for Improved Efficiency
Low Qg and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175°C Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and Reliability
Multiple Package Options
