Product Center
Focus on semiconductor R&D, manufacturing and sales business
FDN304P
  • Fast switching speed

  • High performance trench technology for extremely low RDS(ON)

  • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

FDN302P

This P-Channel 2.5V has been optimized for power  management applications with a wide range of gate  drive voltage (2.5V – 12V).

FDN340P

● TrenchFET Power MOSFET

● Supper high density cell design

AO3415A

● VDS (V) =-20V
● ID =-5 A (VGS =-4.5V)
● RDS(ON) < 43mΩ (VGS =-4.5V)
● RDS(ON) < 55mΩ (VGS =-2.5V)
● RDS(ON) < 75mΩ (VGS =-1.8V)

● RDS(ON) < 100mΩ (VGS =-1.5V)


Can't find what you're looking for?