High density cell design for Low RDS（on）
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
ESD protected
Advanced Trench MOS Technology
Low Gate Charge
Low RDS(ON)
100% EAS Guaranteed
Green Device Available
The IRF3205S is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The IRF3205S meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
The IRF3710Z uses advanced trench technology and design to provide excellent RDS(ON) with low gat e charge. It can be used in a wide variety of applications.
