Low noise and high gain. NF = 1.1 dB Typ., Ga = 11 dB Typ. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
High power gain. MAG = 13 dB Typ. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
The BFG425W-B NPN silicon RF transistor provides low noise and high gain amplification is packaged in a 4-pin SOT343 plastic package.
Epitaxial Die Construction
Two isolated NPN/PNP(BC817W+BC807W)
Transistors in one package
