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2SA812 / EV2SA812-S1

  • High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA)

  • High Voltage: VCEO = -50 V

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2SB1197 / EV2SB1197-R-S1

  • Low VCE(sat).VCE(sat) ≤-0.5V IC / IB= -0.5A / -50mA .

  • IC = -0.8A.

  • PNP silicon transistor

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2SB624 / EV2SB624-S1

  • High DC current gain. hFE:200 TYP.(VCE=-1V,IC=-100mA)

  • Complimentary to 2SD596

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2SC1815 / EV2SC1815-S1

  • Power dissipation

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