TrenchFET Power MOSFET
Supper high density cell design
Battery protection
Load switch
Battery management
This N-Channel 2.5V specified MOSFET is has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.
