This N-Channel Logic Level MOSFET is produced using process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
This N-Channel Logic Level MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
VDS (V) = 30V
ID = 5.8 A (VGS = 10V)
RDS(ON) ＜28m (VGS = 10V)
RDS(ON) ＜33m (VGS = 4.5V)
RDS(ON) ＜52m (VGS = 2.5V)
