The IRF7317 uses advanced trench technology to provide excellent Ros(oN), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
The IRF7205 is the high cell density trenched P-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The IRF7201 is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The IRF7501 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. lt can be used in a wide variety of applications.
