The IRF7504 is the high cell density trenched Dual P-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The IRF7507 uses advanced trench technology to provide excellent Ros(ow), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
Advanced Trench Technology
Lead free product is acquired
Excellent Rps oN,and Low Gate Charge
This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
