TrenchFET® Power MOSFET
175 °C Junction Temperature
PWM Optimized
100 % Rg Tested
Compliant to RoHS Directive 2002/95/EC
Advanced Trench MOS Technology
Low Gate Charge
Low RDS(ON)
100% EAS Guaranteed
Green Device Available
The IRFR24N15D is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
Fast Switching
Lead free product is acquired
Excellent R ps roN) and Low Gate Charge
