The IRFR3607 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous rectification applications.
Advanced Trench MOS Technology
100% EAS Guaranteed
Fast Switching Speed
Green Device Available
Surface-mounted package
Advanced Process Technology
Low QG for Fast Response
High Repetitive Peak Current Capability for Reliable
This N-Channel MOSFET uses advanced Planar technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
