Advanced Trench MOS Technology
Low Gate Charge
Low RDS(ON)
100% EAS Guaranteed
Green Device Available
The IRL2203N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The IRL530N is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The IRFZ48V is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
