Advanced Trench MOS Technology
Low Gate Charge
Low RDS(ON)
100% EAS Guaranteed
Green Device Available
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
The IRFR4620 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
The IRFR4105Z is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
