The IRL3803S is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The IRLR3705Z uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rg e. It ca n be used in a wide variety of applications.
This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
The IRLR3103 is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
