VDs(V)= 100V
ID=0.17 A (VGs = 10V)
RDS(ON)<6Ω(Vcs=10V) RDS(ON)< 10Ω(VGs = 4.5V)
ESD Protected 2KV HBM
The EV-IRF540NS-T2 is the high cell density trenched N-ch MOSFETswhich provide excellent RDSONand gate charge for most of the synchronous buckconve rter applications.
The EV-IRF3205-T3 uses advanced trench technology and design to provide excellent RDS(ON) with low gate Charge It can be used in a wide variety of applications.
