The IRFR220N is the highest performance trench N-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
Simple drive requirement
Low on-resistance
Fast switching characteristic
Pb-free & halogen-free package
IRFP4332, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications.
