The EV-IRFR5410-T1 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The IRF640N is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The IPD80P03-04L is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
● Trench Power LV MOSFET technology
● High Density Cell Design for Low RDS(ON)
● High Speed switching
