The IPD135N03LG is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The IPD90P04P4L04 uses advanced trench technology to provide excellent RosoN), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
⚫Advanced Trench MOS Technology
⚫Low Gate Charge Low RDS(ON)
⚫100% EAS Guaranteed
⚫Green Device Available
Power MOSFET
Very low on-resistance RDS(on) @ VGS=4.5
VPb-free lead plating; RoHS compliant
