⚫Advanced Trench MOS Technology
⚫Low Gate Charge
⚫Low RDS(ON)
⚫100% EAS Guaranteed
⚫Green Device Available
The IPD068P03L3G is the high cell density trenched P-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
⚫Advanced Trench MOS Technology
⚫100% EAS Guaranteed
⚫Fast Switching Speed
⚫Green Device Available
The IPD320N20N3G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
