Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFET ,designed according to the SJ principle. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency.

The IPD50P04P4L11 is the high cell density trenched P-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

The IPD50P03P4L-11 is the high cell density trenched P-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

The IPD082N10N3G is the high cell density trenched Nch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.