Product Center
Focus on semiconductor R&D, manufacturing and sales business
FQD7N10L

The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques.  Power dissipation levels up to 1.5 watts are possible in typical surface mo-unt applications.

FDD86113LZ

The FDD86113LZ is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

FDD8880

The FDD8874 is the high cell density trenched N-ch MOSFETS,which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

FQD19N10L

The FQD19N10L is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

Can't find what you're looking for?