The D-PAK is designed for surface mounting using vapor phase,infraredor wave soldering techniques.  Power dissipation levels up to 1.5 watts are possible in typical surface mo-unt applications.

The IPD050N03LG is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

The IPD50N06S2-14 is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.

Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFET ,designed according to the SJ principle. The resulting device has extremely low on resistance, making itespecially suitable for applications which requiresuperior power density and outstanding efficiency.