The IRLR7843 is the high cell density  trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the  synchronous buck converter applications. 

The IRLR7843 meet the RoHS and Green  Product requirement, 100% EAS guaranteed  with full function reliability approved.

These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS standard.

The NDS331N uses advanced trench technology to provide excellent RDS(ON), low gate charge and  operation with gate voltages as low as 2.5V. This device is suitable for use as a  Battery protection or in other Switching application.

Features 

• VDS (V) = -60V 

• ID = -7A (VGS = -10V)

   ID = -6A (VGS = -4.5V) 

• RDS(ON) < 55mΩ (VGS = -10V) 

• RDS(ON) < 65mΩ (VGS = -4.5V)