• Low on resistance RDS(ON)
• Low gate threshold voltage
• Low input capacitance
• ESD protected up to 2KV
● Trench Power LV MOSFET technology
● High density cell design for Low RDS(ON)
● High Speed switching
The BSC027N04LSG uses advanced trench technology to provide excellent Ros(on, low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
The BSCO50N04LSG is the high cell density trenched P-ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
