Very low gate charge for high frequency applications
Optimized for dc-dc conversion
N-channel, normal level
Excellent gate charge x Ros(on product (FOM)
Very low on-resistance R os(on)
150 °C operating temperature
BSC080N03MSG is the high cell density trenched Nch MOSFETs,which provide excellent RDSON and gate charge for most ofthe synchronous buck converter applications.
BSC057N08N use advanced MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.
Advanced Trench MOS Technology
100% EAS Guaranteed
Fast Switching Speed
Green Device Available
