BSZ146N10LS5 use advanced SGT MOSFET technology toprovide low RDS(ON), low gate charge, fast switchingand excellent avalanche characteristics.

The BSZ100N06LS3C uses advanced trench technology to provide excellent Ros(ow), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

The BSZ065N06LS5 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buckconverter applications.

The IRF520N is the highest  performance trench N-ch MOSFETs with  extreme high cell density, which provide  excellent RDSON and gate charge for most of  the synchronous buck converter applications . The IRF520N meet the RoHS and Green Product  requirement, 100% EAS guaranteed with full  function reliability approved.