Split Gate Trench MOSFET technology
Excellent package for heat dissipation
High density cell design for low Ros(oN)
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC1) for target applications
• N-channel
• Logic level
• Excellent gate charge x R DS(on) product (FOM)
• Very low on-resistance R DS(on)
• Superior thermal resistance
• 100% Avalanche tested
Split Gate Trench MOSFET technology
Excellent package for heat dissipation
High density cell design for low RDs(ON)
Very low gate charge for high frequency applications
Optimized for dc-dc conversion
N-channel, normal level
Excellent gate charge x Ros(on product (FOM)
Very low on-resistance R os(on)
150 °C operating temperature
