Advanced Trench MOS Technology
Low Gate Charge
100% EAS Guaranteed
Green Device Available
The lRF9Z24N uses advanced trench technology to provide excellent Ros(on), low gate charge andoperation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent package for good heat dissipation
