IRF7853 use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.

The IRF7530 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. lt can be used in a wide variety of applications.

The lRF9956 is the highest performance trenchN-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved.

The lRF9956 is the highest performance trenchN-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved.