The IRF9393 uses advanced trench technology to provide excellent Ros(ow), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

The IRF9362 is the highest performance trenchN-ch MOSFETs with extreme high cell density, which provide excellent RDsON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved

40V/180A Power MOSFET

Very low on-resistance RDS(on) @ VGS=4.5 V

Pb-free lead plating; RoHS compliant

The IRFB4620 is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.