The lRFB3307Z use advanced SGT MOSFET technology toprovide low Ros(oN) , low gate charge, fast switchingThis device is specially designed to get better ruggednessand suitable to use in Consumer electronic power supply Motor controlSynchronous-rectification lsolated DCSynchronous-rectification applications

The IRFB260N is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

The IRFB7730 uses advanced SGT II technologyto  provide excellent RDS(ON), low gate charge and  operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection  or in other Switching application.

40V/180A Power MOSFET

Very low on-resistance RDS(on) @ VGS=4.5 V

Pb-free lead plating; RoHS compliant