The lRLB8721 is the high cell density trenched N-ch MOSFETs, which provide excellent RosoNand gate charge for most of the synchronous buckconverter applications.

The IRLB8721 meet the RoHS and Green Productrequirement, 100% EAS guaranteed with fulfunction reliability approved.

The IRLMS6802 uses advanced trenchIt utilizes the latest processing techniquesto achieve the high cell density and reduces theon-resistance with high repetitive avalanche ratingThese features combine to make this designan extremely efficient and reliable device for usein power switching application and a wide varietyof other applications.

The IRLMS6702 uses advanced trenchIt utilizes the latest processing techniquesto achieve the high cell density and reduces theon-resistance with high repetitive avalanche ratingThese features combine to make this designan extremely efficient and reliable device for usein power switching application and a wide varietyof other applications.

• Trench Power MV MOSFET technology

• Excellent package for heat dissipation

• High density cell design for low Ros(ON)