The FDD24AN06LA0 is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The FDD044AN03L is the high cell density trenched N-ch MOSFETS, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications.
The FDD068AN03L is the high cellde nsity trenched N -ch MOSFETS,whichpro videsex cellent RDSON and efficie ncyfor mostof thes mall power switching and load swit chap plications.
The FDD1600N10ALZ uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
