The IRLU120N is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The IRLU120 meet the RoHS and Green Product requirement with full function reliability approved.
The iRLZ34N uses advanced trench technology to provide excellent Ros(om, low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application
Split Gate Trench MOSFET technology
Excellent package for heat dissipation
High density cell design for low Ros(oN)
The IRLZ44NS uses advanced trench technology to provide excellent Rosom, low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
