This N-Channel MOSFET uses advanced trench technology and  design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

The IRF2807 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The IRF2807 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

The IRF2807S is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The IRF2807S meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.

IRF7493 use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics.