The PSMN017-80B is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
The FS8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
The Sl2301ADS is the high cell density trenched P-ch MOSFETs, which provides excellent RDSONand efficiency for most of the small power switching and load switch applications.
