High density cell design for LowRDS(on)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability
ESD protected
Low On-Resistance: RDS(ON)
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected 2KV HBM
● Trench Power MV MOSFET technology
● Voltage controlled small signal switch
● Low input Capacitance ● Fast Switching Speed
● Low Input / Output Leakage
● ESD Protected up to 2KV(HBM)
P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope, intended for use in relay, high-speed and line transformer drivers.
