The IRF530NS is the highest performance trenchN-ch MOSFETs with extreme high cell densitywhich provide excellent RDSON and gate chargefor most of the synchronous buck converterapplicationsThe IRF530NS meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
The EV-IRF530N-T3 is the highest performance trench N-ch MOSFETs with extreme high cell density,which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
VDS (V) = -60V
ID = -7A (VGS = -10V) ID = -6A (VGS = -4.5V)
RDS(ON) < 55mΩ (VGS = -10V)
RDS(ON) < 65mΩ (VGS = -4.5V)
