The PMV55ENEAR ses advanced trench technology to provideexcellent Rps(oN), low gate charge and operation with gatevoltages as low as 2.5V.This device is suitable for use as aBattery protection or in other switching application.
The PSMN8R0-40PS is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
