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2N7002B
  • High density cell design for low RDS(ON)

  • Voltage controlled small signal switch

  • Rugged and reliable 

  • High saturation current capability

30N06

The 30N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha rge. It can be used in a wide variety of applications.

SI2308A
  • VDS (V) = 60V   ID = 3 A (VGS=10V)

  • RDS(ON) < 80mΩ (VGS = 10V),ID=3A

  • RDS(ON) < 95mΩ (VGS = 4.5V),ID=1.9A

SI2310A
  • VDS (V)=60V

  • ID=3A

  • RDS(ON) <80mΩ(VGS = 10V)   

  • RDS(ON) <95mΩ(VGS = 4.5V)

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