The UAD8C05L01 includes back -to-back TVS
diodes fabricated in a proprietary silicon
avalanche technology to provide protection for
electronic equipment that may experience
destructive electrostatic
discharge (ESD). These robust diodes can safely
absorb repetitive ESD strikes up to the maximum
level specified in the IEC61000 -4-2 international
standard without performance degradation.
The back-to-back configuration provides
symmetrical ESD protection for data lines when AC
signals are present.

Bidirectional ESD protection of oneline 

Very low diode capacitance: Cd=11pF 

Max. peak pulse power: PPP=45W
Low clamping voltage: VCL=12.5V
Ultra low leakage current: IRM<1nA
ESD protection up to30kV
IEC61000-4-2; level4 (ESD)
IEC61000-4-5 (surge); IPP=4.8A

Ultra low capacitance bidirectional ElectroStatic
Discharge (ESD) protection diodes in small SurfaceMounted Device (SMD) plastic packages designed
to protect one data line from the damage caused by
ESD.

Low capacitance ElectroStatic Discharge
(ESD) protection diodes in ultra small
SMD plastic packages designed to
protect one signal line from the damage
caused by ESD and other transients.