• Metal silicon junction, majority carrier conduction
• Guarding for overvoltage protection
• Low power loss, high efficiency
• High current capability
• low forward voltage drop
• High surge capability
• For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications
Low forward voltage：VF(3) = 0.9 V(Typ.)
Fast reverse recovery time:trr = 1.6 ns(Typ.)
Small Total Capacitance :CT = 0.9pF(Typ.)
• Low Forward Voltage Drop
• Guard Ring Construction for Transient Protection
• High Conductance
• Also Available in Lead Free Version
• Low Forward Voltage Drop
• Guard Ring Construction for Transient Protection
• High Conductance
• Also Available in Lead Free Version
