• Metal silicon junction, majority carrier conduction

• Guarding for overvoltage protection 

• Low power loss, high efficiency  

• High current capability  

• low forward voltage drop  

• High surge capability  

• For use in low voltage, high frequency inverters,   free wheeling, and polarity protection applications

• Metal silicon junction, majority carrier conduction

• Guarding for overvoltage protection 

 • Low power loss, high efficiency  

• High current capability  

• low forward voltage drop  

• High surge capability  

• For use in low voltage, high frequency inverters,   free wheeling, and polarity protection applications

▪ For surface mounted applications 

▪ Glass Passivated Chip Junction 

▪ Fast reverse recovery time 

▪ Ideal for automated placement 

▪ For surface mounted applications 

▪ Glass Passivated Chip Junction 

▪ Fast reverse recovery time 

▪ Ideal for automated placement 

▪ Lead free in comply with EU RoHS 2011/65/EU directives