Main Stage side: 650v Gan E-mode MOSFET (validating)
Diode (fast recovery diode) : VR & GT; = 400V, CFP
MOSFET:VDSS 100 V,RDon:1-5mR
Secondary side diode (Schottky diode) : VR: 100V
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AC/DC Totem Pole and LLC high voltage DC/DC topology
Parallel system, higher efficiency, higher robustness and power density
Smaller size, higher degree of miniaturization
Simplified gate drives require lower BOM, smaller magnetic components, and higher operating frequencies