The UCLAMP3301D is constructed using proprietary  EPD process technology.  The EPD process provides low standoff voltages with  significant reduc-tions in leakage currents and capacitance over silicon-avalanche diode processes. They feature a true operating voltage of 3.3 volts for superior  protection when compared to traditional pn junction  devices. The UCLAMP3301D is in a SOD-323 package and will  protect one unidirectional line. They give the designer  the flexibility to protect one line in applications where  arrays are not practical.