产品中心
专注于半导体研发、制造和销售业务
FDN359BN

This N-Channel Logic Level MOSFET is produced using process that has been especially tailored to  minimize on-state resistance and yet maintain superior switching performance. 

These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.


没有找到您要查找的内容?